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Proceedings Paper

Defects reduction at BEOL interconnect within 300mm manufacturing environment
Author(s): Chien-Hsien S. Lee; Yayi Wei; Mark Kelling; ShaoBeng Law; Morris Mobley; K. C. Chai
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Paper Abstract

Process yield is a critical factor for a success of 300mm manufacturing. Typically, higher yield corresponds to lower defect counts within the respective processing steps (lithography, etch, plating, and CMP). Within BEOL lithographic processes, there are issues of defects within same lithographic technology and there are concerns of defects between the generation of lithographic technologies, for example, immersion, 193nm "dry", and DUV (248nm). In order to have an effective defect reduction strategy, defects have to be monitored, identified, and analyzed for points of origins. In this paper, we explore three areas of interests in the BEOL: 1) defects occur between different processing steps, specifically, after Immersion Lithography, after Reactive Ion Etch (RIE), and after Chemical Mechanical Polish (CMP), 2) defects after CMP between lithographic technologies (Immersion, Dry, and DUV), and finally 3) defects between different devices. We were able to find evidence of transferable processing defects.

Paper Details

Date Published: 13 March 2012
PDF: 11 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83261S (13 March 2012); doi: 10.1117/12.915654
Show Author Affiliations
Chien-Hsien S. Lee, GLOBALFOUNDRIES Inc. (United States)
Yayi Wei, GLOBALFOUNDRIES Inc. (United States)
Mark Kelling, GLOBALFOUNDRIES Inc. (United States)
ShaoBeng Law, GLOBALFOUNDRIES Inc. (United States)
Morris Mobley, GLOBALFOUNDRIES Inc. (United States)
K. C. Chai, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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