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Proceedings Paper

Pattern collapse mitigation strategies for EUV lithography
Author(s): Dario L. Goldfarb; Robert L. Bruce; James J. Bucchignano; David P. Klaus; Michael A. Guillorn; Chunghsi J. Wu
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Paper Abstract

In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO2) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

Paper Details

Date Published: 13 March 2012
PDF: 13 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832205 (13 March 2012); doi: 10.1117/12.915431
Show Author Affiliations
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Robert L. Bruce, IBM Thomas J. Watson Research Ctr. (United States)
James J. Bucchignano, IBM Thomas J. Watson Research Ctr. (United States)
David P. Klaus, IBM Thomas J. Watson Research Ctr. (United States)
Michael A. Guillorn, IBM Thomas J. Watson Research Ctr. (United States)
Chunghsi J. Wu, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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