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Proceedings Paper

Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
Author(s): J. P. Salvestrini; A. Ahaitouf; H. Srour; S. Gautier; T. Moudakir; B. Assouar; A. Ougazzaden
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Paper Abstract

Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 104 for optical power in the nW range) is obtained with a highly reduced dark current thanks to the boron incorporation. In the high optical power regime (W range), the time response is in the nanosecond range, which is much smaller than that of GaNand ZnO-based ultraviolet photodetectors. Moreover, the boron incorporation in GaN material allows the tuning of the cutoff wavelength.

Paper Details

Date Published: 20 January 2012
PDF: 10 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82682S (20 January 2012); doi: 10.1117/12.914800
Show Author Affiliations
J. P. Salvestrini, Univ. de Lorraine (France)
Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)
A. Ahaitouf, Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)
Abdellah Univ. (Morocco)
H. Srour, Univ. de Lorraine (France)
S. Gautier, Univ. de Lorraine (France)
Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)
T. Moudakir, Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)
B. Assouar, Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)
Institut Jean Lamour, CNRS, Nancy Univ. (France)
A. Ougazzaden, Georgia Insitute of Technology, CNRS, Geogia Tech Lorraine (France)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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