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Proceedings Paper

A study of thermal properties of power AlGaInP and InGaN LEDs
Author(s): Yan Ding; Weiling Guo; Bifeng Cui; Desheng Cui; Guoqing Wu; Weiwei Yan
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Paper Abstract

III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) have received much attention for their important applications in several areas. The AlGaInP semiconductor materials are capable of emitting light of red and orange, and the InGaN semiconductor materials are capable of emitting light of green and blue. Those four colors of LED chips are encapsulated with epoxy in same conditions. In this paper, the junction temperature of power AlGaInP and InGaN LEDs were measured at different drive current by forward - voltage method .Optical and electrical parameters under different temperature were also measured. Thermal properties of power AlGaInP and InGaN LEDs were analyzed for strong dependence of optical and electrical characteristics of power light-emitting diodes on the diode junction temperature.

Paper Details

Date Published: 22 February 2012
PDF: 9 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 833315 (22 February 2012); doi: 10.1117/12.914762
Show Author Affiliations
Yan Ding, Beijing Univ. of Technology (China)
Weiling Guo, Beijing Univ. of Technology (China)
Bifeng Cui, Beijing Univ. of Technology (China)
Desheng Cui, Beijing Univ. of Technology (China)
Guoqing Wu, Beijing Univ. of Technology (China)
Weiwei Yan, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Erich Kasper; Jinzhong Yu; Xun Li; Xinliang Zhang; Jinsong Xia; Junhao Chu; Zhijiang Dong; Bin Hu; Yan Shen, Editor(s)

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