Share Email Print

Proceedings Paper

Active layer design and power calculation of nitride-based THz quantum cascade lasers
Author(s): HungChi Chou; Mehdi Anwar; Tariq Manzur
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Room temperature III-nitride QCL THz is reported. With increasing carrier concentration, the peak in optical shifts towards higher energies. Peak in the optical gain increases with carrier concentration demonstrating a blue shift correlated to quantum confinement. THz power increases linearly with current demonstrating an output power of 0.4448 μW at 6THz. A higher THz power is obtained in AlxGa1-xN/GaN/AlxGa1-x heterostructures as compared to heterostructures incorporating In. An increase in the Al-mole fraction results in higher THz power.

Paper Details

Date Published: 20 January 2012
PDF: 7 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680O (20 January 2012); doi: 10.1117/12.914477
Show Author Affiliations
HungChi Chou, Univ. of Connecticut (United States)
Mehdi Anwar, Univ. of Connecticut (United States)
Tariq Manzur, Naval Undersea Warfare Ctr. (United States)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top