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Proceedings Paper

Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays
Author(s): J. Day; J. Li; D. Y. C. Lie; C. Bradford; J. Y. Lin; H. X. Jiang
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Paper Abstract

Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.

Paper Details

Date Published: 21 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681X (21 January 2012); doi: 10.1117/12.914061
Show Author Affiliations
J. Day, Texas Tech Univ. (United States)
J. Li, III-N Technology, Inc. (United States)
D. Y. C. Lie, Texas Tech Univ. (United States)
C. Bradford, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
J. Y. Lin, Texas Tech Univ. (United States)
H. X. Jiang, Texas Tech Univ. (United States)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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