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Proceedings Paper

Critical comparison of GaAs and InGaAs THz photoconductors
Author(s): M. Martin; E. R. Brown
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Paper Abstract

Ultrafast photoconductors have been an enabling device technology in the THz field during the past decade. And their implementation is now worldwide in time- and frequency-domains systems of various types. While the technological push is towards InGaAs or similar photoconductors operating at 1550 nm, the GaAs-based devices operating around 800 nm still provide superior performance and robustness in most cases. This paper contrasts the GaAs and 1550-nm devices in terms of materials design and solid-state metrics such as electron-hole lifetime, carrier mobility, and resistivity. It also summarizes the main materials developed over the past 20 years.

Paper Details

Date Published: 24 February 2012
PDF: 7 pages
Proc. SPIE 8261, Terahertz Technology and Applications V, 826102 (24 February 2012); doi: 10.1117/12.914028
Show Author Affiliations
M. Martin, Wright State Univ. (United States)
E. R. Brown, Wright State Univ. (United States)

Published in SPIE Proceedings Vol. 8261:
Terahertz Technology and Applications V
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)

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