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Proceedings Paper

GaN-based LEDs with air voids prepared by laser scribing and chemical etching
Author(s): S. J. Chang
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Paper Abstract

The authors report the formation of air-voids at GaN/cone-shaped-patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220°C for 5 and 20 min, respectively.

Paper Details

Date Published: 6 February 2012
PDF: 5 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82781E (6 February 2012); doi: 10.1117/12.913294
Show Author Affiliations
S. J. Chang, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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