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Proceedings Paper

Peculiarities of As-S glass structure doped with ytterbium
Author(s): Alexandr P. Paiuk; Alexander V. Stronski; Miroslav Vlček; Antonina A. Gubanova; Tsezariy A. Krys'kov; Pavel F. Oleksenko
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Paper Abstract

Chalcogenide glasses As2S3 doped with ytterbium were investigated by Raman spectroscopy in order study the structural changes accompanying the incorporation of impurity metal ions in the host glass structure. Doping of As2S3 glasses with small amount of Yb ions, up to 1 % wt., only slightly affect the short-range order structure of the host matrix. For Yb concentration more than 1 % wt. the sharp increase of presence of the additional bands characteristic for the vibrations non-stoichiometric molecular fragments which contain homopolar S-S and As-As bonds was observed. Such changes correlate with data on the thermal properties of such glasses where Tg values were sharply decreased if Yb concentration was more than 1 % wt. No additional bands besides characteristic for As2S3 stoichiometric and non-stoichiometric structural units were found. The main observed effect under the introduction of ytterbium into As2S3 is the change of relative concentration of the main and non-stoichiometric structural units characteristic for As2S3 glasses.

Paper Details

Date Published: 11 October 2011
PDF: 4 pages
Proc. SPIE 8306, Photonics, Devices, and Systems V, 830617 (11 October 2011); doi: 10.1117/12.912978
Show Author Affiliations
Alexandr P. Paiuk, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Alexander V. Stronski, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Miroslav Vlček, Univ. of Pardubice (Czech Republic)
Antonina A. Gubanova, Kamianets-Podilsky National Univ. (Ukraine)
Tsezariy A. Krys'kov, Kamianets-Podilsky National Univ. (Ukraine)
Pavel F. Oleksenko, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 8306:
Photonics, Devices, and Systems V
Pavel Tománek; Dagmar Senderáková; Petr Páta, Editor(s)

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