Share Email Print
cover

Proceedings Paper

A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect
Author(s): Jing-Jing Li; Swee Hoe Lim; Yong-Hang Zhang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A pulsed voltage bias method is proposed to eliminate the measurement artifacts of external quantum efficiency (EQE) of multi-junction solar cells. Under the DC voltage and light biases in the EQE measurements, the output current and voltage drops on the subcells under the chopped monochromatic light are affected by the low shunt resistances of the Ge subcells, which cause the EQE measurement artifacts for InGaP/InGaAs/Ge triple junction solar cells. A pulsed voltage bias superimposed on the DC voltage and light biases is used to properly control the output current and subcell voltages to eliminate the measurement artifacts. SPICE simulation confirms that the proposed method completely removes the measurement artifacts.

Paper Details

Date Published: 21 February 2012
PDF: 7 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 825616 (21 February 2012); doi: 10.1117/12.912790
Show Author Affiliations
Jing-Jing Li, Arizona State Univ. (United States)
Swee Hoe Lim, Arizona State Univ. (United States)
Yong-Hang Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

© SPIE. Terms of Use
Back to Top