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Proceedings Paper

Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures
Author(s): G. Safaraliev; B. Bilalov; D. Dallaeva; Sh. Ramasanov; K. Geraev; Pavel Tománek
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Paper Abstract

In this study the optical properties of SiC/(SiC)1-x(AlN)x heterostructures were investigated. The photoluminescence spectrum of (SiC)1-x(AlN)x samples at different temperatures and also the dependence of photoluminescence on wavelength of exciting light were studied. Absorption factor is defined using measured values of transmitting efficiency. The results of study of morphology and composition of obtained samples confirm growth regularity in single-crystal phase. It was observed that n-SiC/p-(SiC)1-x(AlN)x begins to shine at reverse voltage that a little exceed the voltage of irreversible breakdown.

Paper Details

Date Published: 11 October 2011
PDF: 7 pages
Proc. SPIE 8306, Photonics, Devices, and Systems V, 83061K (11 October 2011); doi: 10.1117/12.912463
Show Author Affiliations
G. Safaraliev, Dagestan State Technical Univ. (Russian Federation)
B. Bilalov, Dagestan State Technical Univ. (Russian Federation)
D. Dallaeva, Dagestan State Technical Univ. (Russian Federation)
Brno Univ. of Technology (Czech Republic)
Sh. Ramasanov, Dagestan State Technical Univ. (Russian Federation)
K. Geraev, Dagestan State Technical Univ. (Russian Federation)
Pavel Tománek, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 8306:
Photonics, Devices, and Systems V

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