Share Email Print
cover

Proceedings Paper

High-voltage thin GaN LEDs array
Author(s): Ray-Hua Horng; Jia-Hua Lin; Dong-Sing Wuu; Re-Ching Lin; Kun-Ching Shen
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The characteristics of high voltage LED consisted of an array of 64 micro-cells GaN LEDs was investigated through using different substrate. In this study, two kinds of high voltage LEDs are presented; one is grown on sapphire substrate and the other one is on mirror/Si substrate. The output power of high voltage LEDs with sapphire and mirror/Si substrate is 170 and 216 mW at an injection current of 24 mA, respectively. The LEDs on mirror/Si substrate leads to the superior performance in output power as compared with one on sapphire substrate is attributed to the improvement of thermal dissipation and light extraction.

Paper Details

Date Published: 27 February 2012
PDF: 7 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621H (27 February 2012); doi: 10.1117/12.912270
Show Author Affiliations
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)
National Cheng Kung Univ. (Taiwan)
Jia-Hua Lin, National Chung Hsing Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Re-Ching Lin, National Chung Hsing Univ. (Taiwan)
Kun-Ching Shen, National Chung Hsing Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top