Share Email Print
cover

Proceedings Paper

Pyramid nano-voids in GaN and InGaN
Author(s): A. B. Yankovich; A. V. Kvit; H. Y. Liu; X. Li; F. Zhang; V. Avrutin; N. Izyumskaya; Ü. Özgür; H. Morkoc; P. M. Voyles
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High resolution transmission electron microscopy and aberration-corrected scanning transmission electron microscopy (STEM) reveal a new void defect in GaN, Si-doped GaN, and InGaN. The voids are pyramid shaped with symmetric hexagonal {0001} base facets and {10-11} side facets. The pyramid void has a closed or open core dislocation at the peak of the pyramid, which continues up along the [0001] growth direction. The closed dislocations have a 1/3 11-20 edge dislocation Burgers vector component, consistent with known threading dislocations. The open core dislocations are hexagonal shaped with pure screw character, {10-10} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging revealed a larger C concentration inside the void and below the void than above the void. We propose that carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally. Subsequent layers of GaN deposited around the C covered region create the overhanging {10-11} facets, and the meeting of the six {10-11} facets at the pyramid's peak is not perfect, resulting in a dislocation.

Paper Details

Date Published: 22 February 2012
PDF: 9 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826205 (22 February 2012); doi: 10.1117/12.912097
Show Author Affiliations
A. B. Yankovich, Univ. of Wisconsin-Madison (United States)
A. V. Kvit, Univ. of Wisconsin-Madison (United States)
H. Y. Liu, Virginia Commonwealth Univ. (United States)
X. Li, Virginia Commonwealth Univ. (United States)
F. Zhang, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
H. Morkoc, Virginia Commonwealth Univ. (United States)
P. M. Voyles, Univ. of Wisconsin-Madison (United States)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top