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Proceedings Paper

Quantitative strain analysis of interfaces in InAs/GaSb superlattices by aberration-corrected HAADF-STEM
Author(s): K. Mahalingam; H. J. Haugan; G. J. Brown; K. G. Eyink; Bin Jiang
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Paper Abstract

The strain distribution across interfaces in InAs/GaSb superlattices is investigated by scanning transmission electron microscopy (STEM), using an aberration corrected probe. Atomic resolution images of the superlattices (grown on (100)-GaSb substrates) were acquired using the high-angle annular dark field (HAADF) imaging technique. For quantitative strain analysis, the peak-pair algorithm was used to determine the local atomic displacements across interfaces and within individual layers in the structure. The measured displacements were then used to calculate the strain map with respect to a reference lattice in the GaSb-substrate region. To precisely identify the local regions in the strain map Fourier transformation of the HAADF-STEM image was performed to obtain the chemically-sensitive (200)- Fourier component of the image. A comparison of these images with strain profiles determined from the strain maps revealed that the GaSb-on-InAs interface is GaAs-like, with a tensile strain of - 0.018 ± 0.003, whereas the overall strain at the InAs-on-GaSb interface was negligible. In addition, the strain within the GaSb layers was found to be compressive, with a magnitude of 0.008 ± 0.003, indicating In incorporation in these layers.

Paper Details

Date Published: 20 January 2012
PDF: 6 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826831 (20 January 2012); doi: 10.1117/12.911914
Show Author Affiliations
K. Mahalingam, UES Inc. (United States)
Air Force Research Lab. (United States)
H. J. Haugan, Universal Technology Corp. (United States)
Air Force Research Lab. (United States)
G. J. Brown, Air Force Research Lab. (United States)
K. G. Eyink, Air Force Research Lab. (United States)
Bin Jiang, Lawrence Berkeley National Lab. (United States)
FEI Co. (United States)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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