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Proceedings Paper

Spectroscopic analysis of InAs quantum dot solar cells
Author(s): Stephen J. Polly; Christopher G. Bailey; Zachary S. Bittner; Yushuai Dai; Elias G. Fernandez; Seth M. Hubbard
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Paper Abstract

The operation of solar cells incorporating multiple repeat units of InAs quantum dot structures, as well as those with and without δ-doping of 4 and 8 electrons per quantum dot, were studied. Room temperature measurements of these samples revealed high quality devices, but insignificant differences between δ-doped samples and undoped samples. An IR-pumped quantum efficiency measurement was performed at 6 K to probe the extraction of quantum confined carriers through a two-photon process while shutting off phonon-assisted extraction. No two-photon signal rose above the noise, but additional sub-bandgap illuminated IV curves revealed current generation in the quantum dot devices, suggesting the dominant carrier removal mechanism is through tunneling. Finally, dark-diode data was taken and fit to determine ideality factor as a function of temperature. Control devices had an overall larger ideality, while QD devices exhibited variations as a function of temperature, which were attributed to kinetic barriers in the first QD layers, as well as possible Auger recombination at very low temperature.

Paper Details

Date Published: 28 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 825615 (28 February 2012); doi: 10.1117/12.911004
Show Author Affiliations
Stephen J. Polly, Rochester Institute of Technology (United States)
Christopher G. Bailey, U.S. Naval Research Lab. (United States)
Zachary S. Bittner, Rochester Institute of Technology (United States)
Yushuai Dai, Rochester Institute of Technology (United States)
Elias G. Fernandez, Rochester Institute of Technology (United States)
Seth M. Hubbard, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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