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Proceedings Paper

Device simulation of intermediate band solar cells
Author(s): K. Yoshida; Y. Okada; N. Sano
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Paper Abstract

To realize high efficiency solar cells, new concepts beyond the Shockley-Queisser limit are widely investigated. The intermediate band solar cell (IBSC) is one of the candidate concepts. From the importance of device physics, we have developed a device simulator for IBSCs. For device simulation of IBSC, the Poisson equation, carrier continuity equations of electrons in the conduction band (CB) and the valance band (VB) and balanced equation of IB state electrons must be solved self-consistently. The simulation methods can clarify the intrinsic device behavior of IBSCs which cannot be investigated by the detailed balance model. For example, by the existence of electrons trapped in IB states, electrostatic potential along the depth direction of the solar cells is strongly modified from the equilibrium under illumination of sunlight. This potential change is strongly related to its absorption property of sunlight. And the doping to IB region can enhance short circuit current density via IB states. Under larger concentration, this doping effect is decreased by the photofilling effects in the radiative limit. Absorption coefficients of each band-to-band transition are decided by the semiconductor materials and fundamental physics. These limitations make the different spectra and values from ideal treatments and decide the maximum efficiency of the IBSC. In this work, we present the fundamental properties and suggestions to approach the high efficiency IBSC operations as a device.

Paper Details

Date Published: 29 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560P (29 February 2012); doi: 10.1117/12.910993
Show Author Affiliations
K. Yoshida, The Univ. of Tokyo (Japan)
Y. Okada, The Univ. of Tokyo (Japan)
N. Sano, Univ. of Tsukuba (Japan)


Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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