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Proceedings Paper

Modeling carrier relaxation in hot carrier solar cells
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Paper Abstract

Third generation concepts in photovoltaic devices depend critically on the dynamics of ultrafast carrier relaxation and electron-phonon interactions on very short times scales in nanostructures such as quantum wells, wires and dots. Hot carrier solar cells in particular depend on the reduction in the energy relaxation rate in an absorber material, where hot carriers are extracted through energy selective contacts. Here we investigate the short time carrier relaxation in quantum well, hot electron solar cells under varying photoexcitation conditions using ensemble Monte Carlo (EMC) simulation coupled with rate equation models, to understand the limiting factors affecting cell performance. In particular, we focus on the potential role of hot phonons in reducing the energy loss rate in order to achieve sufficient carrier temperature for efficient performance.

Paper Details

Date Published: 21 February 2012
PDF: 10 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560W (21 February 2012); doi: 10.1117/12.910858
Show Author Affiliations
Stephen M. Goodnick, Arizona State Univ. (United States)
Christiana Honsberg, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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