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Proceedings Paper

Radiation effects on quantum dot enhanced solar cells
Author(s): Christopher Kerestes; David Forbes; Christopher G. Bailey; John Spann; Benjamin Richards; Paul Sharps; Seth Hubbard
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Paper Abstract

Radiation tolerance of quantum dot (QD) enhanced solar cells has been measured and modeled. GaAs solar cells enhanced with 10, 20, 40, 60, and 100X layers of strain compensated QDs are compared to baseline devices without QDs. Radiation resistance of the QD layers is higher than the bulk material. Increasing the number of QD layers does not lead to a systematic decrease in QD response throughout the course of radiation exposure. Additionally, InGaP/(In)GaAs/Ge triple junction solar cells with and without 10 layers of strain compensated QDs in the (In)GaAs triple junction solar cells are analyzed. Triple junction solar cells with QDs have a better resistance to Voc degradation but these samples have a degradation in Isc that leads to lower radiation resistance for power output.

Paper Details

Date Published: 21 February 2012
PDF: 10 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561I (21 February 2012); doi: 10.1117/12.910835
Show Author Affiliations
Christopher Kerestes, Rochester Institute of Technology (United States)
David Forbes, Rochester Institute of Technology (United States)
Christopher G. Bailey, Rochester Institute of Technology (United States)
John Spann, Emcore Photovoltaics (United States)
Benjamin Richards, Emcore Photovoltaics (United States)
Paul Sharps, Emcore Photovoltaics (United States)
Seth Hubbard, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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