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Proceedings Paper

One- and two-photon indirect injection of carriers and spins in silicon
Author(s): J. L. Cheng; J. Rioux; J. Fabian; J. E. Sipe
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Paper Abstract

Using an empirical pseudopoential description of electron states and an adiabatic bond charge model for phonon states, a full band structure calculation is performed for the one- and two-photon indirect optical injection of carriers and spins in bulk silicon. The calculated one- and two-photon absorption coefficients are in agreement with experiments. For σ- light propagation direction along 001, the carrier and spin injection rates and the degree of spin polarization show strong valley anisotropy. The carrier injection rates in the Z valleys are larger than that in the X valley. Furthermore, the two photon indirect carrier injection shows anisotropy and linear-circular dichroism with respect to the light propagation direction.

Paper Details

Date Published: 20 February 2012
PDF: 11 pages
Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 826007 (20 February 2012); doi: 10.1117/12.910737
Show Author Affiliations
J. L. Cheng, Univ. of Toronto (Canada)
J. Rioux, Univ. of Toronto (Canada)
J. Fabian, Univ. Regensburg (Germany)
J. E. Sipe, Univ. of Toronto (Canada)

Published in SPIE Proceedings Vol. 8260:
Ultrafast Phenomena and Nanophotonics XVI
Markus Betz; Abdulhakem Y. Elezzabi; Jin-Joo Song; Kong-Thon Tsen, Editor(s)

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