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Proceedings Paper

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime
Author(s): Neng Liu; Sonia Blais; Jan J. Dubowski
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Paper Abstract

The ability of a UV laser to modify surface properties of quantum well (QW) microstructures that would lead to formation of a "defective layer" is of particular interest to the process of QW intermixing (QWI). We discuss the results of surface and interface study of InGaAs/InGaAsP QW microstructures capped with InP and a 243-nm thick layer of SiO2-x that were irradiated with a KrF excimer laser delivering up to 25 pulses at 124 mJ/cm2. The optical quality of SiO2 films remains relatively unaffected by the irradiation with the KrF laser operating in the investigated window of parameters. The x-ray photoelectron spectroscopy experiments point out the negligible role of SiO2-x in out-diffusion of matrix atoms that would enhance the QWI process. However, the KrF laser was found to significantly modify the interface between UV transparent SiO2-x and the InP layer. Our results suggest that the resulting layer of the altered material promotes out-diffusion of atoms and intermixing in the QW region.

Paper Details

Date Published: 20 January 2012
PDF: 10 pages
Proc. SPIE 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers, 820609 (20 January 2012); doi: 10.1117/12.910701
Show Author Affiliations
Neng Liu, Univ. de Sherbrooke (Canada)
Sonia Blais, Univ. de Sherbrooke (Canada)
Jan J. Dubowski, Univ. de Sherbrooke (Canada)


Published in SPIE Proceedings Vol. 8206:
Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers
Jianda Shao, Editor(s)

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