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Proceedings Paper

Study of thin films of LiNbO3 using FTIR and Raman spectroscopy
Author(s): Marketa Zezulová; Miroslav Jelínek; Vladimír Železný; Tomáš Kocourek
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Paper Abstract

Lithium niobate (LiNbO3) is a material which can be used in many applications. LiNbO3 thin films were studied for the development of doped planar waveguides using Pulsed Laser Deposition (PLD) method from two targets. The films were deposited by PLD on SiO2/Si and (0001) sapphire substrates at temperatures 650°C, 700°C, 750°C, from one crystalline and two sintered LiNbO3 targets using KrF excimer laser. The film thickness was ~680 nanometers. Two techniques - Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy - are used to characterize the dependence of the deposited thin films on the deposition conditions. These methods characterize the materials by monitoring their phonons whose spectra are sensitive to film deposition parameters. Bulk LiNbO3 has rhombohedral crystal structure with two chemical units per primitive cell, it means, that 30 degrees of freedom are distributed between A1 and E irreducible representations. The precise assignment of phonon modes, however, has not been unambiguously established. So, we use the spectra for qualitative comparison of the conditions of deposition. The spectra on SiO2/Si substrates of the same temperatures are essentially the same, indicating good reproducibility of the deposition process, but the spectra are shifted in case of different targets. The spectra of the samples deposited from the powder target or magnetron target are shifted to lower wavenumbers. This implies that different targets have an impact on the film growth. The deposition temperature also influences the spectra. The same is valid for films prepared on (0001) sapphire substrates. The bands shift with increasing temperature.

Paper Details

Date Published: 11 October 2011
PDF: 6 pages
Proc. SPIE 8306, Photonics, Devices, and Systems V, 830611 (11 October 2011); doi: 10.1117/12.910590
Show Author Affiliations
Marketa Zezulová, Czech Technical Univ. in Prague (Czech Republic)
Miroslav Jelínek, Czech Technical Univ. in Prague (Czech Republic)
Institute of Physics ASCR (Czech Republic)
Vladimír Železný, Institute of Physics ASCR (Czech Republic)
Tomáš Kocourek, Institute of Physics ASCR (Czech Republic)


Published in SPIE Proceedings Vol. 8306:
Photonics, Devices, and Systems V
Pavel Tománek; Dagmar Senderáková; Petr Páta, Editor(s)

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