Share Email Print
cover

Proceedings Paper

High performance interband cascade lasers at 3.8 microns
Author(s): R. P. Leavitt; J. D. Bruno; J. L. Bradshaw; K. M. Lascola; J. T. Pham; F. J. Towner; S. Suchalkin; G. Belenky; I. Vurgaftman; C. L. Canedy; W. W. Bewley; C. S. Kim; M. Kim; C. D. Merritt; J. R. Meyer
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An interband cascade laser design has been grown by molecular beam epitaxy using uncracked arsenic and antimony sources. Lasers were fabricated into both broad-area and narrow-ridge devices, with cavity lengths ranging between 1 mm and 4 mm. At 300K, under low-duty-cycle pulsed conditions, threshold current densities for lasers with 2-mm cavity lengths are as low as 395 A/cm2, with optical emission centered at a wavelength of ~3.82 μm at 300 K. Continuous-wave (cw) performance of the narrow-ridge devices has been achieved for temperatures up to almost 60°C. We present results of both pulsed (broad-area and ridge) and cw (ridge only) measurements on these lasers, including L-I-V, spectral, cavity-length, and Hakki-Paoli analyses.

Paper Details

Date Published: 8 February 2012
PDF: 12 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771E (8 February 2012); doi: 10.1117/12.910586
Show Author Affiliations
R. P. Leavitt, Maxion Technologies, Inc. (United States)
J. D. Bruno, Maxion Technologies, Inc. (United States)
J. L. Bradshaw, Maxion Technologies, Inc. (United States)
K. M. Lascola, Maxion Technologies, Inc. (United States)
J. T. Pham, Maxion Technologies, Inc. (United States)
F. J. Towner, Maxion Technologies, Inc. (United States)
S. Suchalkin, State Univ. of New York at Stony Brook (United States)
G. Belenky, State Univ. of New York at Stony Brook (United States)
I. Vurgaftman, U.S. Naval Research Lab. (United States)
C. L. Canedy, U.S. Naval Research Lab. (United States)
W. W. Bewley, U.S. Naval Research Lab. (United States)
C. S. Kim, U.S. Naval Research Lab. (United States)
M. Kim, Sotera Defense Solutions, Inc. (United States)
C. D. Merritt, U.S. Naval Research Lab. (United States)
J. R. Meyer, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top