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Proceedings Paper

InGaAs/GaAsP quantum wells for hot carrier solar cells
Author(s): Louise C. Hirst; Markus Fürher; Daniel J. Farrell; Arthur Le Bris; Jean-François Guillemoles; Murad J. Y. Tayebjee; Raphael Clady; Timothy W. Schmidt; Masakazu Sugiyama; Yunpeng Wang; Hiromasa Fujii; Nicholas J. Ekins-Daukes
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Paper Abstract

Hot carrier solar cells have a fundamental efficiency limit well in excess of single junction devices. Developing a hot carrier absorber material, which exhibits sufficiently slow carrier cooling to maintain a hot carrier population under realistic levels of solar concentration is a key challenge in developing real-world hot carrier devices. We propose strain-balanced In0.25GaAs/GaAsP0.33 quantum wells as a suitable absorber material and present continuous-wave photoluminescence spectroscopy of this structure. Samples were optimised with deep wells and the GaAs surface buffer layer was reduced in thickness to maximise photon absorption in the well region. The effect of well thickness on carrier distribution temperature was also investigated. An enhanced hot carrier effect was observed in the optimised structures and a hot carrier distribution temperature was measured in the thick well (14 nm) sample under photon flux density equivalent to 1000 Suns concentration.

Paper Details

Date Published: 21 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560X (21 February 2012); doi: 10.1117/12.910581
Show Author Affiliations
Louise C. Hirst, Imperial College London (United Kingdom)
Markus Fürher, Imperial College London (United Kingdom)
Daniel J. Farrell, Imperial College London (United Kingdom)
Arthur Le Bris, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Jean-François Guillemoles, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Murad J. Y. Tayebjee, The Univ. of Sydney (Australia)
Raphael Clady, The Univ. of Sydney (Australia)
Timothy W. Schmidt, The Univ. of Sydney (Australia)
Masakazu Sugiyama, The Univ. of Tokyo (Japan)
Yunpeng Wang, The Univ. of Tokyo (Japan)
Hiromasa Fujii, The Univ. of Tokyo (Japan)
Nicholas J. Ekins-Daukes, Imperial College London (United Kingdom)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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