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Proceedings Paper

On the role of the scanning line density on the etching of fused silica specimens exposed to femtosecond lasers pulses
Author(s): Yves Bellouard; Ali A. Said; Mark Dugan; Philippe Bado
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Paper Abstract

Fused silica (a-SiO2) exposure to low-energy femtosecond laser pulses (below ablation threshold) introduces a local increase of the HF etching rate. This property has been used to fabricate a variety of structures ranging from simple fluidic channels to more complex optofluidics and optomechanical devices. In practice, the desire patterns are written by contiguously stacking laser exposed regions, which defined the volume to be removed.. In previous work, we showed that there was an optimum energy level for maximizing the efficiency of the etching process. Here, we focus on the interaction between adjacent laser affected zones and its effects on the overall etching process. Experimentally, we exposed fused silica specimens to patterns consisting of matrices of lines with varying density, under various laser exposure conditions. Surprisingly, we show that for certain laser affected zone densities and pulse energies, the exposed regions do not etch while their constitutive elements (i.e. the single laser affected zones) do. This paper describes our recent experimental observations and proposes a qualitative model to explain these findings.

Paper Details

Date Published: 30 January 2012
PDF: 8 pages
Proc. SPIE 8247, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XII, 82470T (30 January 2012); doi: 10.1117/12.910294
Show Author Affiliations
Yves Bellouard, Eindhoven Univ. of Technology (Netherlands)
Ali A. Said, Translume, Inc. (United States)
Mark Dugan, Translume, Inc. (United States)
Philippe Bado, Translume, Inc. (United States)


Published in SPIE Proceedings Vol. 8247:
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XII
Alexander Heisterkamp; Michel Meunier; Stefan Nolte, Editor(s)

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