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Proceedings Paper

830nm high power single mode DFB laser for high volume applications
Author(s): Pierre Doussiere; Mark Tashima; Hery Djie; Kong Weng Lee; Vince Wong; David Venables; Victor Rossin; Erik Zucker
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Paper Abstract

We report an 830nm high power single spatial mode DFB laser design in the AlGaAs/GaAs system that offers performance close to a Fabry-Perot design as well as manufacturing yield compatible with volume production. Single-mode power in excess of 200mW at case temperature up to 600C is consistently obtained for current below 300mA. This performance level is enabled by use of an efficient, partially-corrugated design and a 2nd order grating located on the p-side. Through careful design and an optimized epitaxial re-growth on the grating, promising reliability results compatible with uncooled application are demonstrated.

Paper Details

Date Published: 8 February 2012
PDF: 9 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770A (8 February 2012); doi: 10.1117/12.910238
Show Author Affiliations
Pierre Doussiere, JDSU Corp. (United States)
Mark Tashima, JDSU Corp. (United States)
Hery Djie, JDSU Corp. (United States)
Kong Weng Lee, JDSU Corp. (United States)
Vince Wong, JDSU Corp. (United States)
David Venables, JDSU Corp. (United States)
Victor Rossin, JDSU Corp. (United States)
Erik Zucker, JDSU Corp. (United States)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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