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Proceedings Paper

Properties of niobium oxide films deposited by pulsed DC reactive magnetron sputtering
Author(s): Yuchuan Shao; Kui Yi; Ming Fang; Junchao Zhang
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Paper Abstract

Nb2O5 thin films at various cathode power and substrate bias voltages were deposited by pulsed DC reactive magnetron sputtering of a metallic Nb target in a pure oxygen atmosphere. The characteristics of the films have been studied using spectrometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM). Laser damage tests at 1064 nm wavelength with pulse duration of 12 ns were conducted on the single-layer systems. Results indicate that the cathode power may not be an important impact-factor of the LIDT of Nb2O5 thin films but substrate bias voltage has significant influence on the laser resistance of Niobium oxides films. The maximum laser induced damage threshold (LIDT) of 28.8 J/cm2 was obtained for the film deposited at substrate bias voltage of -60V.

Paper Details

Date Published: 12 January 2012
PDF: 9 pages
Proc. SPIE 8206, Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers, 82060M (12 January 2012); doi: 10.1117/12.910188
Show Author Affiliations
Yuchuan Shao, Shanghai Institute of Optics and Fine Mechanics (China)
Graduate School of Chinese Academy of Sciences (China)
Kui Yi, Shanghai Institute of Optics and Fine Mechanics (China)
Ming Fang, Shanghai Institute of Optics and Fine Mechanics (China)
Junchao Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Graduate School of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 8206:
Pacific Rim Laser Damage 2011: Optical Materials for High Power Lasers
Jianda Shao, Editor(s)

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