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Proceedings Paper

High operating temperature XBn-InAsSb bariode detectors
Author(s): Philip Klipstein; Olga Klin; Steven Grossman; Noam Snapi; Inna Lukomsky; Michael Yassen; Daniel Aronov; Eyal Berkowitz; Alex Glozman; Osnat Magen; Itay Shtrichman; Rami Frenkel; Eliezer Weiss
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Paper Abstract

A bariode is a new type of "diode-like" semiconductor photonic device, in which the transport of majority carriers is blocked by a barrier in the depletion layer, while minority carriers, created thermally or by the absorption of light, are allowed to pass freely across the device. In an n-type bariode, also known as an XBnn structure, both the active photon absorbing layer and the barrier layer are doped with electron donors, while in a p-type bariode, or XBpp structure, they are both doped with electron acceptors. An important advantage of bariode devices is that their dark current is essentially diffusion limited, so that high detector operating temperatures can be achieved. In this paper we report on MWIR n-type bariode detectors with an InAsSb active layer and an AlSbAs barrier layer, grown on either GaSb or GaAs substrates. For both substrate types, the bariodes exhibit a bandgap wavelength of ~ 4.1 μm and operate with Background Limited Performance (BLIP) up to at least 160K at F/3. Different members of the XBnn device family are investigated, in which the contact layer material, "X", is changed between n-InAsSb and p-GaSb. In all cases, the electro-optical properties of the devices are similar, showing clearly the generic nature of the bariode device architecture. Focal Plane Array detectors have been made with a pitch of 15 or 30μm. We present radiometric performance data and images from our Blue Fairy (320×256) and Pelican (640×512) detectors, operating at temperatures up to 180K. We demonstrate for both GaSb and GaAs substrates that detector performance can be achieved which is close to "Rule 07", the benchmark for high quality, diffusion limited, Mercury Cadmium Telluride (MCT) devices.

Paper Details

Date Published: 20 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680U (20 January 2012); doi: 10.1117/12.910174
Show Author Affiliations
Philip Klipstein, SemiConductor Devices (Israel)
Olga Klin, SemiConductor Devices (Israel)
Steven Grossman, SemiConductor Devices (Israel)
Noam Snapi, SemiConductor Devices (Israel)
Inna Lukomsky, SemiConductor Devices (Israel)
Michael Yassen, SemiConductor Devices (Israel)
Daniel Aronov, SemiConductor Devices (Israel)
Eyal Berkowitz, SemiConductor Devices (Israel)
Alex Glozman, SemiConductor Devices (Israel)
Osnat Magen, SemiConductor Devices (Israel)
Itay Shtrichman, SemiConductor Devices (Israel)
Rami Frenkel, SemiConductor Devices (Israel)
Eliezer Weiss, SemiConductor Devices (Israel)

Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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