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Proceedings Paper

High-power single emitters and laser bars with improved performance developed at JENOPTIK
Author(s): M. Zorn; R. Hülsewede; O. Hirsekorn; J. Sebastian; P. Hennig
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Paper Abstract

High-power single emitters and laser bars have proven as widely-used light sources in many industrial and medical applications or as pump source for solid state or fiber lasers. A steady increase in optical and cost efficiency is needed to find the way into new markets. Therefore laser structures and devices have to be designed according to new requirements. The epitaxial structures including the design of the laser bars and the single emitters as well as epitaxial growth process are optimized to enhance the laser performance. Important parameters include the efficiency, the maximum output power, the wavelength stability and finally the reproducibility of the whole manufacturing process. Single emitters have been developed in the wavelength range around 940 nm. For laser bars the wavelength ranges around 880 nm and 1060 nm are under consideration. A wavelength stabilization for 976 nm laser devices is developed.

Paper Details

Date Published: 8 February 2012
PDF: 10 pages
Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 824110 (8 February 2012); doi: 10.1117/12.910083
Show Author Affiliations
M. Zorn, JENOPTIK Diode Lab GmbH (Germany)
R. Hülsewede, JENOPTIK Diode Lab GmbH (Germany)
O. Hirsekorn, JENOPTIK Diode Lab GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)
P. Hennig, JENOPTIK Laser GmbH (Germany)

Published in SPIE Proceedings Vol. 8241:
High-Power Diode Laser Technology and Applications X
Mark S. Zediker, Editor(s)

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