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Proceedings Paper

The root cause of ArF resist CD shrinkage induced by defect inspection
Author(s): Tung-Chang Kuo
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Paper Abstract

For our first impression, defect inspector is considered to be a non-destructive equipment in an advanced Fab. When doing ADI inspection, only defect check is performed and photoresist keeps the same without any physical or chemical change. But is this true for now? I don't think so. Many phenomena or evidences tell us - in advanced processes, defect inspection does play more at the inspection step than what we expected before. Inspection can no longer be regarded as non-destructive. Some thing really happens when ADI inspection is executed. As a result, product suffers yield drop eventually. In the experiment below, different ArF resists among various processes are tested and investigated. Some ArF resists do react on UV light and contraction occurs. Basic studies and experiments based on our limited resources, equipment and time are carried out. We try to find out the mechanism and prove it.

Paper Details

Date Published: 3 April 2012
PDF: 6 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242C (3 April 2012); doi: 10.1117/12.910067
Show Author Affiliations
Tung-Chang Kuo, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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