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Proceedings Paper

VLED for Si wafer-level packaging
Author(s): Chen-Fu Chu; Chiming Chen; Jui-Kang Yen; Yung-Wei Chen; Chingfu Tsou; Chunming Chang; Trung Doan; Chuong Anh Tran
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Paper Abstract

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Paper Details

Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621J (27 February 2012); doi: 10.1117/12.910062
Show Author Affiliations
Chen-Fu Chu, SemiLEDs Optoelectronics Co., Ltd. (Taiwan)
Chiming Chen, SemiLEDs Optoelectronics Co., Ltd. (Taiwan)
Jui-Kang Yen, SemiLEDs Optoelectronics Co., Ltd. (Taiwan)
Yung-Wei Chen, SemiLEDs Optoelectronics Co., Ltd. (Taiwan)
Chingfu Tsou, Feng Chia Univ. (Taiwan)
Chunming Chang, Feng Chia Univ. (Taiwan)
Trung Doan, SemiLEDs Optoelectronics Co., Ltd. (United States)
Chuong Anh Tran, SemiLEDs Optoelectronics Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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