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Proceedings Paper

Nonlinear response of semiconductors driven by intense THz pulses
Author(s): A. Pashkin; F. Junginger; C. Schmidt; B. Mayer; O. Schubert; S. Mährlein; R. Huber; A. Leitenstorfer
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Paper Abstract

We present a review of our recent nonlinear spectroscopy experiments on bulk semiconductors performed using a novel source of ultra-intense multi-THz transients. The field-induced interband optical absorption in InP is studied on subcycle timescales. Our simulations corroborate the Franz-Keldysh effect as the main reason for the observed optical anomalies. The time-resolved four-wave mixing signals generated in InSb demonstrate clear signatures of a nonperturbative excitation regime and can be qualitatively reproduced by a simplified model of a two-level system driven far from the resonance.

Paper Details

Date Published: 20 February 2012
PDF: 6 pages
Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 82600M (20 February 2012); doi: 10.1117/12.910002
Show Author Affiliations
A. Pashkin, Univ. of Konstanz (Germany)
F. Junginger, Univ. of Konstanz (Germany)
C. Schmidt, Univ. of Konstanz (Germany)
B. Mayer, Univ. of Konstanz (Germany)
O. Schubert, Univ. Regensburg (Germany)
S. Mährlein, Univ. of Konstanz (Germany)
R. Huber, Univ. Regensburg (Germany)
A. Leitenstorfer, Univ. of Konstanz (Germany)

Published in SPIE Proceedings Vol. 8260:
Ultrafast Phenomena and Nanophotonics XVI
Markus Betz; Abdulhakem Y. Elezzabi; Jin-Joo Song; Kong-Thon Tsen, Editor(s)

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