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Proceedings Paper

Sensitization of erbium through silicon nanocrystals in silicon rich oxide
Author(s): M. Q. Huda
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Paper Abstract

The process of erbium sensitization through silicon nanocrystals (Si-nc) in silicon rich oxide host is analyzed through a model involving five levels of Er energy states. Energy transfer processes from Si-nc to Er, and mechanisms involving deteriorating effects in Er sensitization are studied. It is proposed that Er atoms are excited through quasi-direct processes involving excitonic recombinations in Si-nc. An effective range of 1.3 nm is estimated for erbium sensitization through Si-nc. Effects of multiple excitation of Si-nc during an erbium lifecycle is analyzed. It is shown that, the fraction of Si-nc that is repeatedly excited at every alternate cycle of excitation increases from small fractions to percentage levels for incident flux levels above 1018/cm2-s. For typical values of Er and Si-nc incorporation, saturating effects in Er luminescence is found to start at flux levels much lower than that for Si-nc excitation. Occurrence of multiple excitation of Si-nc is correlated with the deteriorating effects in Er sensitization at higher flux incidence. Simulated results with our model are in good agreement with reported data of Er luminescence through Si-nc sensitization.

Paper Details

Date Published: 7 February 2012
PDF: 6 pages
Proc. SPIE 8257, Optical Components and Materials IX, 825702 (7 February 2012); doi: 10.1117/12.909765
Show Author Affiliations
M. Q. Huda, Bangladesh Univ. of Engineering and Technology (Bangladesh)

Published in SPIE Proceedings Vol. 8257:
Optical Components and Materials IX
Shibin Jiang; Michel J. F. Digonnet; J. Christopher Dries, Editor(s)

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