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Proceedings Paper

Spectrum-optimized Si-based III-V multijunction photovoltaics
Author(s): Tyler J. Grassman; Andrew M. Carlin; Javier Grandal; Chris Ratcliff; Limei Yang; Michael J. Mills; Steven A. Ringel
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Paper Abstract

A III-V/Si metamorphic epitaxy approach to achieve multi-junction solar cells having nearly ideal optical partitioning of the solar spectrum is described. Following our previously-established methodology for the growth of defect-free GaP on Si(100) substrates and demonstrations of heteroepitaxially integrated III-V-on-Si photovoltaics via GaAsyP1-y metamorphic buffers, we discuss work undertaken on the further development and refinement of these processes and materials, with the goal of minimization of threading dislocation densities in order to enable high-performance solar cells. A substantial, non-trivial increase in growth temperature and general improvement of growth conditions and designs has been achieved for both the heterovalent GaP/Si epitaxial integration process and the GaAsyP1-y compositional grading. Improved dislocation glide and significantly more efficient epitaxial relaxation is found for the GaP/Si system, while enhanced dislocation glide dynamics in the metamorphic GaAsyP1-y buffer system is demonstrated by the evolution of new epitaxial tilt characteristics.

Paper Details

Date Published: 21 February 2012
PDF: 6 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82560R (21 February 2012); doi: 10.1117/12.909658
Show Author Affiliations
Tyler J. Grassman, The Ohio State Univ. (United States)
Andrew M. Carlin, The Ohio State Univ. (United States)
Javier Grandal, The Ohio State Univ. (United States)
Chris Ratcliff, The Ohio State Univ. (United States)
Limei Yang, The Ohio State Univ. (United States)
Michael J. Mills, The Ohio State Univ. (United States)
Steven A. Ringel, The Ohio State Univ. (United States)


Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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