Share Email Print
cover

Proceedings Paper

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion
Author(s): Guangyu Liu; Jing Zhang; Hongping Zhao; Nelson Tansu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

Paper Details

Date Published: 28 February 2012
PDF: 6 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621F (28 February 2012); doi: 10.1117/12.909633
Show Author Affiliations
Guangyu Liu, Lehigh Univ. (United States)
Jing Zhang, Lehigh Univ. (United States)
Hongping Zhao, Case Western Reserve Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top