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Proceedings Paper

850-nm VCSELs optimized for cryogenic data transmission
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Paper Abstract

We report on the development of 850-nm high-speed VCSELs optimized for low-power data transmission at cryogenic temperatures near 100 K. These VCSELs operate on the n=1 quantum well transition at cryogenic temperatures (near 100 K) and on the n=2 transition at room temperature (near 300 K) such that cryogenic cooling is not required for initial testing of the optical interconnects at room temperature. Relative to previous work at 950 nm, the shorter 850-nm wavelength of these VCSELs makes them compatible with high-speed receivers that employ GaAs photodiodes.

Paper Details

Date Published: 7 February 2012
PDF: 7 pages
Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 82760S (7 February 2012); doi: 10.1117/12.909590
Show Author Affiliations
Darwin K. Serkland, Sandia National Labs. (United States)
Kent M. Geib, Sandia National Labs. (United States)
Gregory M. Peake, Sandia National Labs. (United States)
Gordon A. Keeler, Sandia National Labs. (United States)
Alan Y. Hsu, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 8276:
Vertical-Cavity Surface-Emitting Lasers XVI
Chun Lei; Kent D. Choquette, Editor(s)

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