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Proceedings Paper

Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells
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Paper Abstract

We investigate theoretically the influence of indium surface segregation in InGaN/GaN single quantum wells on its optical properties. Obtained results show that the influence of the surface segregation on the dipole matrix element is not equal for all optical transition. This effect results from the joint action of the piezoelectric polarization and indium surface segregation which change selection rules. Quantum well structures having different indium amount are analyzed and found that the influence of the indium surface segregation on absorption spectra is more pronounced in quantum well structures with high indium amount.

Paper Details

Date Published: 28 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621T (28 February 2012); doi: 10.1117/12.909423
Show Author Affiliations
Mykhaylo V. Klymenko, Kharkov National Univ. of Radio Electronics (Ukraine)
Igor A. Sukhoivanov, Univ. de Guanajuato (Mexico)
Oleksiy V. Shulika, Kharkov National Univ. of Radio Electronics (Ukraine)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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