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Proceedings Paper

Room temperature terahertz detectors based on semiconductor nanowire field effect transistors
Author(s): Miriam Serena Vitiello; Dominique Coquillat; Leonardo Viti; Daniele Ercolani; Frederic Teppe; Alessandro Pitanti; Fabio Beltram; Lucia Sorba; Wojciech Knap; Alessandro Tredicucci
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Paper Abstract

Self-assembled nanowires represent a new interesting technology to be explored in order to increase the cut-off frequency of electronic THz detectors. They can be developed in field effect transistor (FET) and diode geometries exploiting non-linearities of either the transconductance or the current-voltage characteristic as detection mechanism. In this work we demonstrate that semiconductor nanowires can be used as building blocks for the realization of highsensitivity terahertz one-dimensional FET detectors. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the non-linearity of the transconductance: the THz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the drain output in the form of a DC voltage. Responsivity values as large as 1 V/W at 0.3 THz have been obtained, with noise equivalent powers (NEP) < 2 × 10-9 W/√Hz at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multi-pixel arrays, make these devices highly competitive as a future solution for THz detection.

Paper Details

Date Published: 20 January 2012
PDF: 8 pages
Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826829 (20 January 2012); doi: 10.1117/12.909408
Show Author Affiliations
Miriam Serena Vitiello, Consiglio Nazionale delle Ricerche (Italy)
NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Dominique Coquillat, CNRS, TERALAB-GIS, Univ. Montpellier 2 (France)
Leonardo Viti, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Daniele Ercolani, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Frederic Teppe, CNRS, TERALAB-GIS, Univ. Montpellier 2 (France)
Alessandro Pitanti, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Fabio Beltram, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Lucia Sorba, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)
Wojciech Knap, CNRS, TERALAB-GIS, Univ. Montpellier 2 (France)
Alessandro Tredicucci, NEST, CNR, Istituto Nanoscienze and Scuola Normale Superiore (Italy)


Published in SPIE Proceedings Vol. 8268:
Quantum Sensing and Nanophotonic Devices IX
Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editor(s)

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