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Proceedings Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
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Paper Abstract

Semipolar (1-101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1-101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1-101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c+-wing regions of the GaN stripes were found to be dominated by a (D0,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c--wing regions.

Paper Details

Date Published: 27 February 2012
PDF: 8 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826224 (27 February 2012); doi: 10.1117/12.909235
Show Author Affiliations
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
S. J. Liu, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
S. Okur, Virginia Commonwealth Univ. (United States)
F. Zhang, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
S. Metzner, Otto-von-Guericke-Univ. Magdeburg (Germany)
C. Karbaum, Otto-von-Guericke-Univ. Magdeburg (Germany)
F. Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
J. Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
D. J. Smith, Arizona State Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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