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Proceedings Paper

Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers
Author(s): Jing Zhang; Hongping Zhao; Nelson Tansu
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Paper Abstract

The gain characteristics of AlGaN-delta-GaN QWs active region with varying delta-GaN positions and AlGaN compositions are analyzed. From our finding, the use of AlGaN-delta-GaN QW resulted in ~ 7-times increase in material gain, in comparison to that of conventional AlGaN QW, for gain media emitting at 240 nm. By employing asymmetric QW design, with optimized GaN delta layer position and asymmetric AlGaN composition layers, the optimized optical gain can be achievable for AlGaN-delta-GaN QW structure with realistic design applicable for deep and mid UV lasers.

Paper Details

Date Published: 14 February 2012
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770J (14 February 2012); doi: 10.1117/12.909165
Show Author Affiliations
Jing Zhang, Lehigh Univ. (United States)
Hongping Zhao, Case Western Reserve Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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