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Proceedings Paper

High-power single-mode InGaAsP/InP laser diodes for pulsed operation
Author(s): Evgenii Kotelnikov; Alexei Katsnelson; Ketan Patel; Igor Kudryashov
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Paper Abstract

We present high power, high reliability, single mode ridge waveguide laser diodes operated in an external cavity configuration. The cavity is formed by installing an InGaAsP/InP laser chip into a cavity with a Bragg grating mirror (BGM). The laser has fiber optical output. The devices are characterized by narrow spectral width operation, in pulsed and CW modes. We obtained 1.7 W output power in single mode fiber at 2 - 10 ns pulses, at a 1550 nm wavelength, with an optical line width of 0.15 nm. For CW excitation, the devices emitted 200 mW optical power with a bandwidth of less than 0.01 nm. These devices exhibit high temperature stability of the laser line spectral position. The construction of these devices enables cost-efficient, narrow bandwidth lasers in the wavelength range from 1300 to 1900 nm.

Paper Details

Date Published: 8 February 2012
PDF: 6 pages
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827715 (8 February 2012); doi: 10.1117/12.909162
Show Author Affiliations
Evgenii Kotelnikov, Princeton Lightwave, Inc. (United States)
Alexei Katsnelson, Princeton Lightwave, Inc. (United States)
Ketan Patel, Princeton Lightwave, Inc. (United States)
Igor Kudryashov, Princeton Lightwave, Inc. (United States)


Published in SPIE Proceedings Vol. 8277:
Novel In-Plane Semiconductor Lasers XI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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