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Proceedings Paper

Pulsed fiber laser texturing of metals, silicon, and ceramics: comparison of surface structural changes induced by ns and fs pulses
Author(s): Sami T. Hendow; Arzu M. Ozkan; Marta Oliveira; Eric Mottay
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Paper Abstract

Various materials including aluminum (Al), monocrystalline silicon (c-Si) and alumina (Al2O3) were treated using two types of fiber lasers, one having femtosecond (fs) pulse width, and the other nanosecond (ns). The surfaces of these materials were characterized and evaluated by optical and electronic microscopy and surface roughness profilometry. Results obtained are correlated with the pulse energy delivery conditions, namely pulse width, average output power, pulse overlap and hatch step size. For metals, fs pulses produced shallow skin depth structuring, and contributed to structured ribbons on the surfaces of Al and c-Si, as well as conical pillars on c-Si. Ns pulses can be used to create distinct patterns or grainy structures, whose characteristics are strongly depending on the pulse overlap and pulse energy. In contrast to the relatively low roughness level encountered with the fs pulses, where the highest average arithmetic roughness of about 1.4 μm on c-Si, ns pulses produced significantly higher roughness values. The measured values for ns-textured surfaces had the range of 0.4-2.2 μm and 1.5-5 μm on c-Si and Al, respectively. Ceramics texturing require high-energy longer ns pulses due to the higher thermal thresholds required for ablation.

Paper Details

Date Published: 15 February 2012
PDF: 12 pages
Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430P (15 February 2012); doi: 10.1117/12.908869
Show Author Affiliations
Sami T. Hendow, Multiwave Photonics (Portugal)
Arzu M. Ozkan, Lumyn Technologies LLC (United States)
Marta Oliveira, INEGI (Portugal)
Eric Mottay, Amplitude Systemes (France)


Published in SPIE Proceedings Vol. 8243:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII
Guido Hennig; Xianfan Xu; Bo Gu; Yoshiki Nakata, Editor(s)

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