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Proceedings Paper

Deep-level charge state control: a novel method for optical modulation in silicon waveguides
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Paper Abstract

In this paper we will describe the fabrication and characterization of passive waveguides which exploit the phenomenon of variable charge state mediation of deep-levels in silicon to vary optical absorption. Silicon waveguides are doped with either thallium or indium and co-doped with phosphorus. Optical absorption is reduced s phosphorus doping is increased. These results suggest a novel method of modulation via charge-state control of the deep-level.

Paper Details

Date Published: 2 February 2012
PDF: 9 pages
Proc. SPIE 8266, Silicon Photonics VII, 82660P (2 February 2012); doi: 10.1117/12.908797
Show Author Affiliations
Edgar Huante-Ceron, McMaster Univ. (Canada)
Dylan Logan, McMaster Univ. (Canada)
Andrew P. Knights, McMaster Univ. (Canada)
Paul E. Jessop, Wilfrid Laurier Univ. (Canada)

Published in SPIE Proceedings Vol. 8266:
Silicon Photonics VII
Joel Kubby; Graham Trevor Reed, Editor(s)

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