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Proceedings Paper

Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm
Author(s): Fabiola A. Camargo; Sylvie Janicot; Isabelle Sagnes; Arnaud Garnache; Patrick Georges; Gaëlle Lucas-Leclin
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Paper Abstract

We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm.

Paper Details

Date Published: 15 February 2012
PDF: 9 pages
Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420F (15 February 2012); doi: 10.1117/12.908738
Show Author Affiliations
Fabiola A. Camargo, Lab. Charles Fabry, CNRS, Univ. Paris-Sud (France)
Sylvie Janicot, Lab. Charles Fabry, CNRS, Univ. Paris-Sud (France)
Isabelle Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
Arnaud Garnache, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
Patrick Georges, Lab. Charles Fabry, CNRS, Univ. Paris-Sud (France)
Gaëlle Lucas-Leclin, Lab. Charles Fabry, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 8242:
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Anne C. Tropper, Editor(s)

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