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Intersubband and intrasubband transition in InGaN quantum dot for solar cell application
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Paper Abstract

This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes are compared and the result shows significant differences due to the quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. For the smaller quantum dot, the efficiency is much higher because of the larger separation of IB band to conduction band. However, the contribution of intermediate bands is small and the bottle neck is found as the low transition rate between IBs and bulk state.

Paper Details

Date Published: 21 February 2012
PDF: 8 pages
Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561F (21 February 2012); doi: 10.1117/12.908674
Show Author Affiliations
Kuang-Chung Wang, National Taiwan Univ. (Taiwan)
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8256:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Alexandre Freundlich; Jean-Francois F. Guillemoles, Editor(s)

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