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Proceedings Paper

Free-carrier electro-absorption and electro-refraction modulation in group IV materials at mid-infrared wavelengths
Author(s): Milos Nedeljkovic; Richard A.. Soref; Goran Z. Mashanovich
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Paper Abstract

Mid-infrared group IV photonics is emerging as a field with possible applications ranging from gas sensing to free-space communications. Free-carrier induced electro-absorption and electro-refraction have become the most widely used modulation mechanisms in active near-infrared silicon photonic devices. This work examines the magnitude of this effect in group IV materials at mid-infrared wavelengths. In silicon electro-absorption effects are calculated from experimental absorption coefficient data, and electro-refraction is calculated through numerical Kramers-Kronig analysis of absorption spectra. In germanium the Drude-Lorentz equations are used to estimate both change in absorption and change in refractive index.

Paper Details

Date Published: 2 February 2012
PDF: 7 pages
Proc. SPIE 8266, Silicon Photonics VII, 82660Y (2 February 2012); doi: 10.1117/12.908650
Show Author Affiliations
Milos Nedeljkovic, Univ. of Surrey (United Kingdom)
Richard A.. Soref, Univ. of Massachusetts Boston (United States)
Goran Z. Mashanovich, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 8266:
Silicon Photonics VII
Joel Kubby; Graham Trevor Reed, Editor(s)

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