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Proceedings Paper

Optimization of photoluminescence and electroluminescence of silicon nanocrystals in a superlattice host
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Paper Abstract

The use of silicon superlattices is a well established technique for creating nanocrystals. Depositing superlattices allows for adjustment of nanocrystal properties, such as the emission wavelength, by varying the silicon layer thickness. Opposed to the silicon layer, the silicon dioxide thickness effects are not documented as extensively. This study looks at superlattice films with silicon and silicon dioxide layers varying from 0.4 to 0.8 nm and 2.7 to 5.1 nm respectively, deposited via a plasma enhanced chemical vapor deposition. Photoluminescence and electroluminescence measurements were taken to show an increase in the output intensity increased oxide thickness.

Paper Details

Date Published: 29 February 2012
PDF: 7 pages
Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630M (29 February 2012); doi: 10.1117/12.908599
Show Author Affiliations
Michael Roman, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 8263:
Oxide-based Materials and Devices III
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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