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Proceedings Paper

Integration of 3D plasmonic devices with silicon-on-insulator-based optical circuitry
Author(s): Ruoxi Yang; Zhaolin Lu
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Paper Abstract

We demonstrate integrated plasmonic devices on silicon-on-insulator (SOI) substrate for photon-plasmon conversion and plasmonic mode transformation at near-infrared frequency. The plasmonic junction converts photons to surface plasmons and then back to photons with 7.35 dB conversion loss, and has successfully focused multimode plasmonic propagation to deep subwavelength (80 nm by 50 nm) single mode propagation with 2.28 dB/μm propagation loss. The integration approach leads to a robust and versatile platform for 3D nanoplasmonic gauges potentially functional in ultra-fast communications and optical sensing.

Paper Details

Date Published: 2 February 2012
PDF: 6 pages
Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650N (2 February 2012); doi: 10.1117/12.908502
Show Author Affiliations
Ruoxi Yang, Rochester Institute of Technology (United States)
Zhaolin Lu, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8265:
Optoelectronic Integrated Circuits XIV
Louay A. Eldada; El-Hang Lee, Editor(s)

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