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Proceedings Paper

Hybrid quantum well/quantum dot structures for broad spectral bandwidth devices
Author(s): Siming Chen; Kejia Zhou; Ziyang Zhang; David T. D. Childs; Jonathan R. Orchard; Richard A. Hogg; Kenneth Kennedy; Max. Hughes
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Paper Abstract

In this paper we report a hybrid quantum well (QW) and quantum dot (QD) structure to achieve a broad spontaneous emission and gain spectra. A single quantum well is introduced into a multi-layer stack of quantum dots, spectrally positioned to cancel the losses due to the second excited state of the dots. Attributed to the combined effect of QW and QDs, we show room temperature spontaneous emission with a 3dB bandwidth of ~250 nm and modal gain spanning over ~300 nm. We describe how this is achieved by careful design of the structure, balancing thermal emission from the QW and transport/capture processes in the QDs. We will also compare results from a QD-only epitaxial structure to describe how broadband gain/emission can be achieved in this new type of structure.

Paper Details

Date Published: 28 February 2012
PDF: 7 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550E (28 February 2012); doi: 10.1117/12.908494
Show Author Affiliations
Siming Chen, The Univ. of Sheffield (United Kingdom)
Kejia Zhou, The Univ. of Sheffield (United Kingdom)
Ziyang Zhang, The Univ. of Sheffield (United Kingdom)
David T. D. Childs, The Univ. of Sheffield (United Kingdom)
Jonathan R. Orchard, The Univ. of Sheffield (United Kingdom)
Richard A. Hogg, The Univ. of Sheffield (United Kingdom)
Kenneth Kennedy, The Univ. of Sheffield (United Kingdom)
Max. Hughes, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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