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Proceedings Paper

Realization of a photonic crystal surface emitting laser through GaAs based regrowth
Author(s): David M. Williams; Kristian M. Groom; David T. D. Childs; Ben J. Stevens; Salam Khamas; Tim S. Roberts; Richard J. E. Taylor; Richard A. Hogg; Naoki Ikeda; Yoshimasa Sugimoto
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Paper Abstract

Recently, there has been much interest in a novel type of device, the 2D photonic crystal surface emitting laser (PCSEL). For commercialization of these devices a robust and high reliability manufacturing method is required. Previous GaAs wafer fusion and GaN regrowth techniques have utilised voids within the photonic crystal which suffer from reliability and reproducibility issues. We demonstrate a GaAs based PCSEL structure which uses epitaxial regrowth to completely infill the etched structure. We discuss the design, epitaxy, and operating characteristics of these devices over a range of temperatures.

Paper Details

Date Published: 28 February 2012
PDF: 11 pages
Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550Z (28 February 2012); doi: 10.1117/12.908373
Show Author Affiliations
David M. Williams, The Univ. of Sheffield (United Kingdom)
Kristian M. Groom, The Univ. of Sheffield (United Kingdom)
David T. D. Childs, The Univ. of Sheffield (United Kingdom)
Ben J. Stevens, The Univ. of Sheffield (United Kingdom)
Salam Khamas, The Univ. of Sheffield (United Kingdom)
Tim S. Roberts, The Univ. of Sheffield (United Kingdom)
Richard J. E. Taylor, The Univ. of Sheffield (United Kingdom)
Richard A. Hogg, The Univ. of Sheffield (United Kingdom)
Naoki Ikeda, National Institute for Materials Science (Japan)
Yoshimasa Sugimoto, National Institute for Materials Science (Japan)


Published in SPIE Proceedings Vol. 8255:
Physics and Simulation of Optoelectronic Devices XX
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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