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Proceedings Paper

GaN-based microcavity polariton light emitting diodes
Author(s): Tien-Chang Lu; Ying-Yu Lai; Si-Wei Huang; Jun-Rong Chen; Yung-Chi Wu; Shiang-Chi Lin; Shing-Chung Wang; Yoshihisa Yamamoto
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Paper Abstract

Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.

Paper Details

Date Published: 6 February 2012
PDF: 7 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780O (6 February 2012); doi: 10.1117/12.908343
Show Author Affiliations
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)
Ying-Yu Lai, National Chiao Tung Univ. (Taiwan)
Si-Wei Huang, National Chiao Tung Univ. (Taiwan)
Jun-Rong Chen, National Chiao Tung Univ. (Taiwan)
Yung-Chi Wu, National Chiao Tung Univ. (Taiwan)
Shiang-Chi Lin, National Chiao Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao Tung Univ. (Taiwan)
Yoshihisa Yamamoto, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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